60612 tkim/62005ac msim tb-00001557/32505ac tsim ta-3705 no.8278-1/8 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 CPH5901 n-channel jfet and npn bipolar transistor 15v, 6 to 20ma, 50v, 150ma, composite type cph5 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. ordering number : en8278b features ? composite type with j-fet and npn transistors contained in the cph5 package, improving the mounting ef ciency greatly ? the CPH5901 is formed with two chips, being equivalent to the 2sk932 and the other the 2sc4639, placed in one package ? common drain and emitter speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit [fet] drain-to-source voltage v dsx 15 v gate-to-drain voltage v gds --15 v gate current i g 10 ma drain current i d 50 ma allowable power dissipation p d mounted on a ceramic board (600mm 2 0.8mm) 350 mw [tr] collector-to-base voltage v cbo 55 v collector-to-emitter voltage v ceo 50 v emitter-to-base voltage v ebo 6v collector current i c 150 ma collector current (pulse) i cp 300 ma base current i b 30 ma collector dissipation p c mounted on a ceramic board (600mm 2 0.8mm) 350 mw [tr] total power dissipation p t mounted on a ceramic board (600mm 2 0.8mm) 500 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7017a-007 product & package information ? package : cph5 ? jeita, jedec : sc-74a, sot-25 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : collector 2 : gate 3 : source 4 : emitter/drain 5 : base cph5 2 1 4 53 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 1a lot no. rank tl 543 12 CPH5901f-tl-e CPH5901g-tl-e
CPH5901 no.8278-2/8 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max [fet] gate-to-drain breakdown voltage v (br)gds i g =--10 a, v gs =0v --15 v gate cutoff current i gss v gs =--10v, v ds =0v --1.0 na cutoff voltage v gs (off) v ds =5v, i d =100 a --0.2 --0.6 --1.4 v drain current i dss v ds =5v, v gs =0v 6.0* 20.0* ma forward transfer admittance | yfs | v ds =5v, v gs =0v, f=1khz 25 50 ms input capacitance ciss v ds =5v, v gs =0v, f=1khz 10 pf reverse transfer capacitance crss v ds =5v, v gs =0v, f=1khzz 3.0 pf noise figure nf v ds =5v, rg=1k , i d =1ma, f=1khz 1.5 db [tr] collector cutoff current i cbo v cb =35v, i e =0a 0.1 a emitter cutoff current i ebo v eb =4v, i c =0a 0.1 a dc current gain h fe v ce =6v, i c =1ma 135 400 gain-bandwidth product f t v ce =6v, i c =10ma 200 mhz output capacitance cob v cb =6v, f=1mhz 1.7 pf collector-to-emitter saturation voltage v ce (sat) i c =50ma, i b =5ma 0.08 0.4 mv base-to-emitter saturation voltage v be (sat) i c =50ma, i b =5ma 0.8 1.0 v collector-to-base breakdown voltage v (br)cbo i c =10 a, i e =0a 55 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma, r be = 50 v emitter-to-base breakdown voltage v (br)ebo i e =10 a, i c =0a 6 v turn-on time t on see speci ed test circuit. 0.15 ns storage time t stg 0.75 ns fall time t f 0.20 ns * : the CPH5901 is classi ed by i dss as follows : (unit : ma) rank f g i dss 6.0 to 12.0 10.0 to 20.0 switching time test circuit ordering information device package shipping memo CPH5901f-tl-e cph5 3,000pcs./reel pb free CPH5901g-tl-e cph5 3,000pcs./reel + + 50 input outpu t v r r b v cc =20v 220 f 470 f v be = --5v pw=20 s i b1 i b2 d.c. 1% 10i b1 = --10i b2 = i c =10ma r l
CPH5901 no.8278-3/8 i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- ma i d -- v ds drain-to-source voltage, v ds -- v drain current, i d -- ma i d -- v ds drain-to-source voltage, v ds -- v drain current, i d -- ma [fet] [fet] [fet] v gs (off) -- i dss drain current, i dss -- ma [fet] cutoff voltage, v gs (off) -- v | y fs | -- i d drain current, i d -- ma forward transfer admittance, | y fs | -- ms [fet] | y fs | -- i dss drain current, i dss -- ma forward transfer admittance, | y fs | -- ms [fet] drain-to-source voltage, v ds -- v input capacitance, ciss -- pf ciss -- v ds crss -- v ds drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf [fet] [fet] itr10329 0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 12 14 16 v gs =0v --0.1v --0.2v --0.3v --0.4v --0.5v --0.6v v gs =0v --0.1v --0.2v - -0.3v --0.4v itr10330 0246 810 0 4 8 12 16 20 --0.5v --0.6v i dss =6ma 20ma 10ma itr10333 itr10334 v ds =5v f=1khz v gs =0v f=1mhz v gs =0v f=1mhz 1.0 5 3 2 7 5 3 2 10 5 3 3 2 10 7 100 7 5 itr10335 v ds =5v v gs =0v f=1khz 5 3 32 7 5 10 5 3 2 100 10 7 itr10336 1.0 23 3 5 57 7 10 2 2 7 5 3 3 10 2 1.0 1.0 23 57 7 10 23 5 1.0 2 7 7 5 5 3 10 itr10331 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 10 20 30 40 i dss =20ma 15ma 10ma 6ma 57 2 3 35 10 7 --1.0 --0.1 5 3 2 2 v ds =5v i d =100 a itr10332 v ds =5v
CPH5901 no.8278-4/8 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- mw [fet] i d =1ma 3ma frequency, f -- hz nf -- f noise figure, nf -- db 10 100 1k 5 1m 25 225 10k 25 100k 25 10 100 1k 5 1m 25 225 10k 25 100k 25 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 v ds =5v rg=1k frequency, f -- hz nf -- f noise figure, nf -- db v ds =5v i d =10ma rg=500 1k 10k itr10337 itr10338 10ma 50 30 20 40 10 0 0 0.4 1.0 0.8 0.6 0.2 50 a 100 a 150 a 200 a 250 a 300 a 350 a 400 a 450 a 500 a itr10340 020 50 40 10 30 itr10341 12 10 6 4 8 2 0 ta=75 c --25 c 100 3 2 7 5 1000 2 7 5 3 0.1 3 25 1.0 3 23 25 100 3 2 5 10 25 c v ce =6v itr10343 ta=75 c --25 c 160 120 140 20 80 100 40 60 0 v ce =6v 25 c 0 0.2 0.4 0.8 0.6 1.0 1.4 1.2 itr10342 i b =0 a 10 a 15 a 20 a 25 a 30 a 35 a 40 a 45 a 50 a 5 a i b =0 a 0 20 40 60 80 100 120 140 160 0 100 50 200 300 150 250 350 400 it09862 [fet] [fet] i c -- v ce collector-to-emitter voltage, v ce -- v [tr] collector current, i c -- ma i c -- v ce collector-to-emitter voltage, v ce -- v [tr] collector current, i c -- ma [tr] i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma [tr] h fe -- i c collector current, i c -- ma dc current gain, h fe mounted on a ceramic board (600mm 2 ? 0.8mm)
CPH5901 no.8278-5/8 [tr] f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- mhz [tr] c ib -- v eb input capacitance, c ib -- pf emitter-to-base voltage, v eb -- v [tr] collector current, i c -- ma v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- v [tr] collector current, i c -- ma v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v collector dissipation, p c -- mw ambient temperature, ta -- c p c -- ta [tr] [tr] cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v 3 100 2 5 7 3 2 5 7 1.0 10 52 7 3 2 100 57 3 2 3 1.0 10 2 3 2 5 5 7 1.0 10 57 57 3 2 itr10344 itr10345 v ce =6v f=1mhz 0 400 300 200 50 100 350 250 150 20 060 40 80 100 140 120 160 it09863 1.0 7 23 5 7 22 35 10 100 5 3 1.0 10 7 5 3 2 7 i c / i b =10 itr10348 75 c ta= --25 c 25 c 3 10 2 3 2 5 7 1.0 5 7 1.0 10 57 57 3 2 100 57 3 2 itr10346 f=1mhz 1.0 7 23 5 7 22 35 10 100 5 3 2 0.1 1.0 7 5 3 2 3 2 7 i c / i b =10 itr10347 25 c ta=75 c --25 c mounted on a ceramic board (600mm 2 ? 0.8mm)
CPH5901 no.8278-6/8 embossed taping speci cation CPH5901f-tl-e, CPH5901g-tl-e
CPH5901 no.8278-7/8 outline drawing land pattern example CPH5901f-tl-e, CPH5901g-tl-e mass (g) unit 0.02 * for reference mm unit: mm 0.6 2.4 1.4 0.95 0.95
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